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| SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1179 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High breakdown voltage 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -50 -5 -150 200 150 -50 to 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter saturation voltage Base-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons IC = -10iA , IE = 0A IC = -1mA , RBE = IE = -10iA , IC = 0A VCB = -35V , IE = 0A VEB = -4V , IC = 0 VCE = -6V , IC = -1mA 200 Min -55 -50 -5 -0.1 -0.1 400 -0.5 -1.0 4.0 180 V V pF MHz Typ Max Unit V V V A A VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA Cob fT VCB = -6V , IE=0 ,f = 1MHz VCE = -6V , IC = -10mA Marking Marking M +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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